MOSFET - Enhancement Type MOSFET Explained (Construction, Working and Characteristics Explained) | Summary and Q&A

449.1K views
March 24, 2019
by
ALL ABOUT ELECTRONICS
YouTube video player
MOSFET - Enhancement Type MOSFET Explained (Construction, Working and Characteristics Explained)

TL;DR

Learn about the construction, working, and unique characteristics of the enhancement type MOSFET.

Install to Summarize YouTube Videos and Get Transcripts

Key Insights

  • 👻 The enhancement type MOSFET requires a control voltage to create a channel between the drain and source terminals, allowing current flow.
  • ⚡ The threshold voltage is the gate-source voltage at which the inversion layer of free electrons is formed, creating the channel.
  • ⚡ The width of the channel and the current flow can be controlled by adjusting the gate-source voltage and the drain-source voltage.
  • 💇 The enhancement type MOSFET can operate in different regions: cut-off, linear, and saturation.
  • 🌍 The transfer characteristic shows the relationship between the input voltage (Vgs) and the output drain current (Id).
  • 💁 The p-channel enhancement type MOSFET has a reversed polarity compared to the n-channel, with channels formed by negative control voltages.

Transcript

Hey friends, welcome to the YouTube channel ALL ABOUT ELECTRONICS. In this video, we will learn about the construction, working and the characteristics of the enhancement type of MOSFET. Now, if we talk about the construction then in some aspects it is similar to the depletion type of MOSFET. So, if we see the construction of the n-channel enhancem... Read More

Questions & Answers

Q: What is the main difference between the enhancement type MOSFET and the depletion type MOSFET?

The main difference is that the enhancement type MOSFET does not have a channel between the drain and source terminals until a control voltage is applied, while the depletion type MOSFET has a channel already formed by default.

Q: How does the channel get formed in the enhancement type MOSFET?

When a control voltage (Vgs) is applied between the gate and source terminals, the number of charge carriers in the region increases, creating a channel between the drain and source terminals.

Q: What are the different regions of operation in the enhancement type MOSFET?

The different regions are the cut-off region (when Vgs < Vt), the linear region (when Vds < Vgs - Vt and Vgs > Vt), and the saturation region (when Vds >= Vgs - Vt).

Q: How does the width of the channel change with the drain-source voltage (Vds) in the enhancement type MOSFET?

As the Vds increases, the width of the channel decreases towards the drain terminal due to the increased reverse biasing of the PN junction, resulting in a narrower channel towards the drain side.

Q: What is the main difference between the enhancement type MOSFET and the depletion type MOSFET?

The main difference is that the enhancement type MOSFET does not have a channel between the drain and source terminals until a control voltage is applied, while the depletion type MOSFET has a channel already formed by default.

More Insights

  • The enhancement type MOSFET requires a control voltage to create a channel between the drain and source terminals, allowing current flow.

  • The threshold voltage is the gate-source voltage at which the inversion layer of free electrons is formed, creating the channel.

  • The width of the channel and the current flow can be controlled by adjusting the gate-source voltage and the drain-source voltage.

  • The enhancement type MOSFET can operate in different regions: cut-off, linear, and saturation.

  • The transfer characteristic shows the relationship between the input voltage (Vgs) and the output drain current (Id).

  • The p-channel enhancement type MOSFET has a reversed polarity compared to the n-channel, with channels formed by negative control voltages.

  • The symbols used for the enhancement type MOSFETs distinguish between n-channel and p-channel, with dashed lines indicating the absence of a channel under no-bias conditions.

Summary & Key Takeaways

  • The enhancement type MOSFET has a similar construction to the depletion type MOSFET, with a substrate made of p-type material and metallic contacts connecting the drain and source terminals to the n-type material.

  • When a control voltage is applied between the gate and source terminals, a channel is formed between the drain and source terminals, allowing current flow.

  • The width of the channel and the current flow can be controlled by adjusting the gate-source voltage and the drain-source voltage.

Share This Summary 📚

Summarize YouTube Videos and Get Video Transcripts with 1-Click

Download browser extensions on:

Explore More Summaries from ALL ABOUT ELECTRONICS 📚

Summarize YouTube Videos and Get Video Transcripts with 1-Click

Download browser extensions on: